Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n/p-Junction Diode
نویسندگان
چکیده
We demonstrate an abrupt and box-shaped n/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n/p-junction diodes at 400 ◦C–600 ◦C, based on the in situ doping technique. Excellent diode characteristics having a 1.1 × 10 on/off ratio and a high forward current density (120 A/cm at 1 V) are obtained in an n/p diode at 600-◦C in situ doping.
منابع مشابه
Phosphorus and arsenic profile control for high performance epitaxial base bipolar junction devices
In this study, we report on the incorporation behavior of n-type species in undoped layers grown subsequent to doped layers at low temperature ~700–750 °C! reduced pressure chemical vapor deposition of silicon/silicon germanium (Si/Si12xGex) performed in a single wafer epitaxial deposition system. Significant amounts of these species are observed even in an undoped layer grown subsequent to the...
متن کاملDonor-doping characteristics of gas-source molecular beam epitaxial Si and Si1-xGex using phosphine
Well-behaved and reproducible n-type doping of Si and Sir -$e, by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017-10’9 cmp3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The do...
متن کاملElectric Field Distribution in a Reverse-Biased p-n Junction
This problem is motivated by the use of crystals as detectors of energetic charged particles that pass completely through the crystal, leaving a trail of electron-ion pairs. Although the crystals are nominally insulators, the electrons so liberated are in the conduction band and can be separated from the ion by a DC electric field, resulting in a signal pulse on the electrodes plated onto oppos...
متن کاملHigh active carrier concentration in n-type, thin film Ge using delta-doping
We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10cm, and uniform activated dopant concentrations above 4 × 10cm in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of p...
متن کاملCubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy
Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...
متن کامل